Highly Bendable In-Ga-ZnO Thin Film Transistors Using Thermally Stable Organic Dielectric Layer

JavaScript Disabled: Some essential features of DSIAC may be unavailable while JavaScript is disabled in your web browser. Please enable JavaScript to take full advantage of this site. A list of supported browsers and versions is available here.

Posted: December 05, 2016 | Source: Date Line: December 5

This content is only accessible from the source.

Read Original Article The appearance of external hyperlinks on this DTIC website does not constitute endorsement by the United States Department of Defense (DoD) of the linked websites, or the information, products or services contained therein. Any opinions, findings, conclusions, or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the opinions of the United States DoD.

Want to learn more about this topic?