$0.00

1.3  μM Submilliamp Threshold Quantum Dot Micro-Lasers on Si

Record-small quantum dot lasers directly grown on industry-standard (001) silicon with low power consumption and high temperature stability.

Alternate option to wafer-bonding techniques as on-chip silicon light sources with dense integration and low power consumption.

December 4, 2017 | Source: The Optical Society, osapublishing.org, 2017, Alex Gaeta

As a promising integration platform, silicon photonics need on-chip laser sources that dramatically improve capability, while trimming size and power dissipation in a cost-effective way for volume manufacturability. Currently, direct heteroepitaxial growth of III–V laser structures on Si using quantum dots as the active region is a vibrant field of research, with the potential to demonstrate low-cost, high-yield, long-lifetime, and high-temperature devices. Ongoing work is being conducted to reduce the power consumption, maximize the operating temperature, and switch from miscut Si substrates toward the so-called exact (001) Si substrates that are standard in microelectronics fabrication. Here, we demonstrate record-small electrically pumped micro-lasers epitaxially grown on industry standard (001) silicon substrates.  Continuous-wave lasing up to 100°C was demonstrated at 1.3 μm communication wavelength. A submilliamp threshold of 0.6 mA was achieved for a micro-laser with a radius of 5 μm. The thresholds and footprints are orders of magnitude smaller than those previously reported lasers epitaxially grown on Si.